• DocumentCode
    1113052
  • Title

    Increase in barrier height of Al/n-GaAs contacts induced by high current

  • Author

    Canali, C. ; Umena, L. ; Fantini, F. ; Scorzoni, A. ; Zanoni, E.

  • Author_Institution
    Universita di Padova, Padova, Italy
  • Volume
    7
  • Issue
    5
  • fYear
    1986
  • fDate
    5/1/1986 12:00:00 AM
  • Firstpage
    291
  • Lastpage
    293
  • Abstract
    High forward-gate current (HFGC) density induces an increase of the Al/n-GaAs barrier height from 0.8 to 0.96 eV, thus suggesting the formation of an GaxAl1-xAs layer at the interface. Results show that this interaction is more enhanced by the electron current from the semiconductor to the metal than by thermal treatments. The intense electron flow is believed to contribute to the breaking of the interfacial oxide layer present at the metal-semiconductor interface, thus promoting Al/GaAs interdiffusion. Data were obtained on power MESFET´s with Al metallized gate.
  • Keywords
    Current density; Electrons; Fingers; Gallium arsenide; Heat sinks; Life testing; Metallization; Temperature; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26377
  • Filename
    1486200
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113052