Electronic switching effect and phase-change transition in chalcogenide materials

Author

Redaelli, A. ; Pirovano, A. ; Pellizzer, F. ; Lacaita, A.L. ; Ielmini, D. ; Bez, R.

Author_Institution

Dipt. di Elettronica e Informazione, Politecnico di Milano, Milan, Italy

Volume

25

Issue

10

fYear

2004

Firstpage

684

Lastpage

686

Abstract

The threshold switching mechanism in amorphous chalcogenides is investigated, showing experimental data that once and for all demonstrate its electronic nature. The physical mechanisms responsible for the switching to the highly conductive state are discussed and the impact of cumulative read-out pulses is also investigated, showing that phase-change transitions induced by usual reading operations in phase-change memory cells are completely negligible.

Keywords

chalcogenide glasses; semiconductor storage; semiconductor switches; amorphous chalcogenides; amorphous semiconductors; crystal growth; electronic switching effect; nonvolatile memories; phase change memories; phase-change memory cells; phase-change transition; threshold switching mechanism; Amorphous materials; Amorphous semiconductors; Conducting materials; Electric resistance; Electrical resistance measurement; Nonvolatile memory; Phase change materials; Phase change memory; Pulse measurements; Threshold voltage; Amorphous semiconductors; PCM; chalcogenide; crystal growth; nonvolatile memories; phase change memories;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.836032

Filename

1336971