مرکز منطقه ای اطلاع رساني علوم و فناوري - Low-resistance ohmic contacts to AlGaAs/GaAs and In<inf>0.52</inf>Al<inf>0.48</inf>As/In<inf>0.53</inf>Ga<inf>0.47</inf>As modulation-doped structures obtained by halogen lamp annealing

DocumentCode :

1113159

Title :

Low-resistance ohmic contacts to AlGaAs/GaAs and In0.52Al0.48As/In0.53Ga0.47As modulation-doped structures obtained by halogen lamp annealing

Author :

Hong, Won-Pyo ; Seo, Kwang S. ; Bhattacharya, Pallab K. ; Lee, H.

Author_Institution :

The University of Michigan, Ann Arbor, MI

Volume :

Issue :

fYear :

1986

fDate :

5/1/1986 12:00:00 AM

Firstpage :

320

Lastpage :

323

Abstract :

The successful application of short-term halogen lamp annealing to form ohmic contacts to AlGaAs/GaAs and In0.52Al0.48As/ In0.53Ga0.47As modulation-doped structures is demonstrated. Use of Ti in the electron-beam evaporated metallization scheme and a two-step annealing cycle give contacts with reproducibly good electrical and morphological characteristics. Minimum values of specific contact resistance $\\rho_{c} = 4.0 \\times 10^{-7}$ and $6.0 \\times 10^{-7}$ Ω.cm²for AlGaAs/GaAs and In0.52Al0.48As/In0.53Ga0.47As, respectively, are measured. Corresponding values of the transfer resistance Rcare 0.12 ± 0.02 and 0.18 ± 0.05 Ω.mm. These values are the lowest achieved with lamp annealing and are comparable to the best obtained with transient furnace annealing.

Keywords :

Alloying; Annealing; Electrical resistance measurement; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; Lamps; Metallization; Ohmic contacts;

fLanguage :

English

Journal_Title :

Electron Device Letters, IEEE

Publisher :

ieee

ISSN :

0741-3106

Type :

jour

DOI :

10.1109/EDL.1986.26387

Filename :

1486210

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1113159