• DocumentCode
    1113159
  • Title

    Low-resistance ohmic contacts to AlGaAs/GaAs and In0.52Al0.48As/In0.53Ga0.47As modulation-doped structures obtained by halogen lamp annealing

  • Author

    Hong, Won-Pyo ; Seo, Kwang S. ; Bhattacharya, Pallab K. ; Lee, H.

  • Author_Institution
    The University of Michigan, Ann Arbor, MI
  • Volume
    7
  • Issue
    5
  • fYear
    1986
  • fDate
    5/1/1986 12:00:00 AM
  • Firstpage
    320
  • Lastpage
    323
  • Abstract
    The successful application of short-term halogen lamp annealing to form ohmic contacts to AlGaAs/GaAs and In0.52Al0.48As/ In0.53Ga0.47As modulation-doped structures is demonstrated. Use of Ti in the electron-beam evaporated metallization scheme and a two-step annealing cycle give contacts with reproducibly good electrical and morphological characteristics. Minimum values of specific contact resistance \\rho_{c} = 4.0 \\times 10^{-7} and 6.0 \\times 10^{-7} Ω.cm2for AlGaAs/GaAs and In0.52Al0.48As/In0.53Ga0.47As, respectively, are measured. Corresponding values of the transfer resistance Rcare 0.12 ± 0.02 and 0.18 ± 0.05 Ω.mm. These values are the lowest achieved with lamp annealing and are comparable to the best obtained with transient furnace annealing.
  • Keywords
    Alloying; Annealing; Electrical resistance measurement; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; Lamps; Metallization; Ohmic contacts;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26387
  • Filename
    1486210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113159