Title :
Avalanche gain in GexSi1-x/Si infrared waveguide detectors
Author :
Pearsall, T.P. ; Temkin, H. ; Bean, John C. ; Luryi, Serge
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
fDate :
5/1/1986 12:00:00 AM
Abstract :
Avalanche gain in GexSi1-x/Si heterostructures photodiodes has been measured for the first time. Absorption of infrared radiation occurs in a GexSi1-x/Si strained-layer superlattice (SLS) which serves as a waveguide core, and the avalanche multiplication takes place in one of the Si-cladding layers. Multiplication factors as high as 50 have been obtained for a 1.1-µm wavelength response (x = 0.2). The external absolute sensitivity operating at a multiplication of 10 is 1.1 A/W at 1.3 µm for an uncoated device.
Keywords :
Absorption; Avalanche photodiodes; Laser sintering; Optical buffering; Optical fiber communication; Optical materials; Optical noise; Optical superlattices; Optical waveguides; Semiconductor device noise;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26390