DocumentCode :
1113193
Title :
Avalanche gain in GexSi1-x/Si infrared waveguide detectors
Author :
Pearsall, T.P. ; Temkin, H. ; Bean, John C. ; Luryi, Serge
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
Volume :
7
Issue :
5
fYear :
1986
fDate :
5/1/1986 12:00:00 AM
Firstpage :
330
Lastpage :
332
Abstract :
Avalanche gain in GexSi1-x/Si heterostructures photodiodes has been measured for the first time. Absorption of infrared radiation occurs in a GexSi1-x/Si strained-layer superlattice (SLS) which serves as a waveguide core, and the avalanche multiplication takes place in one of the Si-cladding layers. Multiplication factors as high as 50 have been obtained for a 1.1-µm wavelength response (x = 0.2). The external absolute sensitivity operating at a multiplication of 10 is 1.1 A/W at 1.3 µm for an uncoated device.
Keywords :
Absorption; Avalanche photodiodes; Laser sintering; Optical buffering; Optical fiber communication; Optical materials; Optical noise; Optical superlattices; Optical waveguides; Semiconductor device noise;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26390
Filename :
1486213
Link To Document :
بازگشت