Title :
Preliminary ionizing radiation tests on n-channel inversion-mode GaInAs MISFET´s
Author :
Gardner, P.D. ; Naraya, S. Yenga ; Sluzark, W.J. ; McGee, D.J.
Author_Institution :
David Sarnoff Research Center, Princeton, NJ
fDate :
6/1/1986 12:00:00 AM
Abstract :
Preliminary results of low-dose rate ionizing radiation (cobalt-60) tests on n-channel inversion-mode GaInAs MISFET´s up to a total dose of 5 × 107rad(Si) are presented. The data show that the GaInAs MISFET threshold voltage shifts negatively up to a total dose of 5 × 105rad(Si), with a maximum shift of -0.9 V. The threshold voltage then shifts in a positive direction at higher doses. The mobility factor decreases very slightly and then increases with increasing dose.
Keywords :
Gallium arsenide; Indium phosphide; Ionizing radiation; Lattices; Logic circuits; MISFETs; Microwave devices; Semiconductivity; Testing; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26406
