Chromatic monitoring for the processing of materials with plasmas

Author

Russell, P.C. ; Khandaker, I. ; Glavas, E. ; Alston, D. ; Smith, R.V. ; Jones, G.R.

Author_Institution

Dept. of Electr. Eng. & Electron., Liverpool Univ., UK

Volume

141

Issue

2

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

99

Lastpage

104

Abstract

A non-invasive monitoring system for material-processing plasmas has been developed based on chromatic modulation. The monitor consists of two parts, one for monitoring the emission spectra of plasmas and the second for monitoring the thickness of films on semiconductors during etching or deposition. These chromatic systems offer significant speed advantages over equivalent spectroscopic techniques. Both systems have been tested on a variety of plasma chambers and typical results from both systems are presented. Chromatic monitoring provides rapid feedback on the state of a plasma and on film thickness, providing the possibility for real-time monitoring and control of the plasma state. Further enhancement of the chromatic technique allows two dimensional monitoring of the plasma, providing information on its uniformity

Keywords

modulation spectroscopy; monitoring; optical modulation; plasma deposition; plasma diagnostic techniques; thickness measurement; chromatic modulation; chromatic monitoring; control; deposition; etching; film thickness; material-processing plasmas; non-invasive monitoring; plasma state; real-time monitoring; spectral signatures; thickness of films; two dimensional monitoring;

fLanguage

English

Journal_Title

Science, Measurement and Technology, IEE Proceedings -

Publisher

iet

ISSN

1350-2344

Type

jour

DOI

10.1049/ip-smt:19949850

Filename

295420