• DocumentCode
    1113395
  • Title

    Inversion-mode GaInAs MISFET ring oscillators

  • Author

    Upadhyayula, L.C. ; Gardner, P.D. ; Liu, S.G. ; Narayan, S. Yegna

  • Author_Institution
    RCA David Sarnoff Research Center, Princeton, NJ
  • Volume
    7
  • Issue
    6
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    390
  • Lastpage
    392
  • Abstract
    Inversion mode, self-aligned-gate, metal-insulator-semiconductor field-effect transistors (MISFET´s) have been fabricated on p-type Ga0.47In0.53As epitaxially grown on semi-insulating InP substrates. Ring-oscillator (RO) circuits were designed using enhancement-driver/ enhancement-load-type logic gates. Propagation delay as low as 50 ps was measured in a nine-stage ring oscillator (driver MISFET about 1.2-µm gate length) with a fan-in and fan-out of one. These are believed to be the first results on GaInAs inversion-mode MISFET-based digital integrated circuits.
  • Keywords
    FETs; Indium phosphide; Logic circuits; Logic design; Logic gates; MISFETs; Metal-insulator structures; Propagation delay; Ring oscillators; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26410
  • Filename
    1486233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113395