Title :
A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor
Author :
Chen, T.R. ; Utaka, Katsuyuki ; Zhuang, Yuhua ; Liu, Ya-Yun ; Yariv, Amnom
Author_Institution :
Chengdu Institute of Radio Engineering, China
fDate :
6/1/1987 12:00:00 AM
Abstract :
A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.
Keywords :
Bipolar transistors; Gallium materials/lasers; Integrated optoelectronics; Bipolar transistors; DH-HEMTs; Heterojunction bipolar transistors; High speed optical techniques; Indium phosphide; Optical bistability; Physics; Power lasers; Substrates; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1987.1073402
