Title :
Fabrication and characteristics of ion beam etched cavity InP/InGaAsP BH lasers
Author :
Bouadma, N. ; Hogrel, J.F. ; Charil, J. ; Carré, M.
Author_Institution :
Centre National d́Etudes des Télécommunications, Bagneux, France
fDate :
6/1/1987 12:00:00 AM
Abstract :
A low temperature ion beam etching (IBE) process is successfully applied to facet mirror fabrication of 1.3 μm InGaAsP/InP buried heterostructure (BH) lasers. Ar ion beam etching characteristics of InP are studied and masking conditions are optimized for obtaining low-damage, vertical, and smooth etched facets. Lasers fabricated by this technique have threshold currents and quantum efficiencies comparable to those of lasers with conventionally cleaved mirrors. CW operation at room temperature has been achieved. Initial experimental results of preliminary aging tests are also presented.
Keywords :
Gallium materials/lasers; Laser resonators; Aging; Argon; Etching; Identity-based encryption; Indium phosphide; Ion beams; Mirrors; Optical device fabrication; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1987.1073404
