DocumentCode
1113432
Title
Fabrication and characteristics of ion beam etched cavity InP/InGaAsP BH lasers
Author
Bouadma, N. ; Hogrel, J.F. ; Charil, J. ; Carré, M.
Author_Institution
Centre National d́Etudes des Télécommunications, Bagneux, France
Volume
23
Issue
6
fYear
1987
fDate
6/1/1987 12:00:00 AM
Firstpage
909
Lastpage
914
Abstract
A low temperature ion beam etching (IBE) process is successfully applied to facet mirror fabrication of 1.3 μm InGaAsP/InP buried heterostructure (BH) lasers. Ar ion beam etching characteristics of InP are studied and masking conditions are optimized for obtaining low-damage, vertical, and smooth etched facets. Lasers fabricated by this technique have threshold currents and quantum efficiencies comparable to those of lasers with conventionally cleaved mirrors. CW operation at room temperature has been achieved. Initial experimental results of preliminary aging tests are also presented.
Keywords
Gallium materials/lasers; Laser resonators; Aging; Argon; Etching; Identity-based encryption; Indium phosphide; Ion beams; Mirrors; Optical device fabrication; Temperature; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073404
Filename
1073404
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