Title :
An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth
Author :
Weiner, Joseph S. ; Lee, Jaesik S. ; Leven, Andreas ; Baeyens, Yves ; Houtsma, Vincent ; Georgiou, George ; Yang, Yang ; Frackoviak, John ; Tate, Alaric ; Reyes, Roberto ; Kopf, Rose F. ; Sung, Wei-Jer ; Weimann, Nils G. ; Chen, Young-Kai
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
Return-to-zero differential phase-shift keying applications require a differential amplifier with high bandwidth, high gain, low noise, and good input impedance match. In this paper, we describe an InGaAs-InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-Ω. The input-referred current noise is less than 35 pA/√Hz over the measurement range up to 40 GHz.
Keywords :
III-V semiconductors; bipolar integrated circuits; differential amplifiers; gallium arsenide; heterojunction bipolar transistors; impedance matching; indium compounds; phase shift keying; 40 GHz; 47 GHz; InGaAs-InP; InGaAs-InP HBT differential transimpedance amplifier; InGaAs-InP heterostructure bipolar transistor; indium phosphide; input-referred current noise; monolithic microwave integrated circuit; opto-electronic integrated circuit; return-to-zero differential phase-shift keying; Bandwidth; Delay; Differential amplifiers; Feedback; Heterojunction bipolar transistors; Impedance matching; Indium phosphide; MMICs; Optical amplifiers; Optical receivers; InP; Indium Phosphide; MMIC; OEIC; TIA; monolithic microwave integrated circuit; opto-electronic integrated circuit; transimpedance amplifier;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.833565
