DocumentCode :
1113458
Title :
High-power output over 200 mW of 1.3 µm GaInAsP VIPS lasers
Author :
Oshiba, Saeko ; Matoba, Akio ; Kawahara, Masato ; Kawai, Yoshio
Author_Institution :
Oki electric Industry Co., Ltd., Tokyo, Japan
Volume :
23
Issue :
6
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
738
Lastpage :
743
Abstract :
Maximum CW output power was investigated in GaInAsP 1.3μm V-grooved inner stripe on P-substrate (VIPS) lasers considering both cavity length and facet reflectivity. Long-cavity lasers show a strong dependence of maximum output power on front reflectivity. A CW light output over 200 mW was obtained at room temperature using a 700 μm long cavity laser with 5 and 98 percent reflectivity of the front and rear facets, respectively. The fundamental transverse mode operation was confirmed up to 170 mW. A coupled power over 110 mW into a single-mode fiber was achieved with a coupling efficiency of 58 percent. We have verified the high reliability under high power levels, as high as 75 percent of the maximum CW output powers at room temperature.
Keywords :
CW lasers; Gallium materials/lasers; Aging; Coatings; Current density; Etching; Power generation; Power lasers; Reflectivity; Temperature distribution; Thermal resistance; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073407
Filename :
1073407
Link To Document :
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