Title :
A comparison of linear handset power amplifiers in different bipolar technologies
Author :
Nellis, Keith ; Zampardi, Peter J.
Author_Institution :
Skyworks Solutions Inc., Newbury Park, CA, USA
Abstract :
This work evaluates four linear power amplifiers for wireless handset applications that were fabricated (or simulated) in four different bipolar technologies. The four bipolar technologies are currently competing to become, or remain as, the preferred bipolar technology for the commercial development of power amplifier modules. The four technologies are GaAs HBT, Si BJT, SiGe HBT, and InP HBT. The purpose of this work is to evaluate the performance of power amplifiers in each of these competing technologies in terms of typical linear handset PA requirements (i.e., POUT, ACPR, PAE, PGAIN, and ruggedness).
Keywords :
Ge-Si alloys; III-V semiconductors; bipolar integrated circuits; bipolar transistors; gallium arsenide; indium compounds; mobile handsets; power amplifiers; silicon; CDMA; GaAs; InP; Si; SiGe; code division multiple access; different bipolar technologies; heterojunction bipolar transistors; linear handset power amplifiers; power amplifier modules; wireless handset applications; BiCMOS integrated circuits; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Measurement; Multiaccess communication; Power amplifiers; Silicon germanium; Telephone sets; Bipolar transistors; CDMA; HBTs; code division multiple access; efficiency; heterojunction bipolar transistors; linearity; power amplifiers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.833761
