Title :
One- and Two-Dimensional Coherently Coupled Implant-Defined Vertical-Cavity Laser Arrays
Author :
Lehman, Ann C. ; Choquette, Kent D.
Author_Institution :
Univ. of Illinois at Urbana-Champaign, Urbana
Abstract :
Loss between elements of coherently coupled vertical-cavity surface-emitting laser (VCSEL) arrays typically causes out-of-phase operation with on-axis intensity nulls in the far-field. We show that in-phase evanescently coupled VCSEL arrays may be defined by proton implantation. An advantage for implanted in-phase coherently coupled VCSEL arrays is that this approach employs a simple and reliable fabrication process where the absence of loss between elements leads to in-phase coupling. We present data for 2, 3, and 4 element in-phase implant-defined coherently coupled VCSEL arrays.
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; semiconductor laser arrays; semiconductor quantum wells; surface emitting lasers; 1D coherently coupled laser arrays; 2D coherently coupled laser arrays; GaAs; implant-defined vertical-cavity laser arrays; in-phase evanescently coupled arrays; out-of-phase operation; proton implantation; vertical-cavity surface-emitting laser arrays; Apertures; Distributed Bragg reflectors; Implants; Optical arrays; Optical coupling; Optical device fabrication; Optical losses; Optical surface waves; Surface emitting lasers; Vertical cavity surface emitting lasers; Coherent arrays; vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.903503