• DocumentCode
    1113616
  • Title

    One- and Two-Dimensional Coherently Coupled Implant-Defined Vertical-Cavity Laser Arrays

  • Author

    Lehman, Ann C. ; Choquette, Kent D.

  • Author_Institution
    Univ. of Illinois at Urbana-Champaign, Urbana
  • Volume
    19
  • Issue
    19
  • fYear
    2007
  • Firstpage
    1421
  • Lastpage
    1423
  • Abstract
    Loss between elements of coherently coupled vertical-cavity surface-emitting laser (VCSEL) arrays typically causes out-of-phase operation with on-axis intensity nulls in the far-field. We show that in-phase evanescently coupled VCSEL arrays may be defined by proton implantation. An advantage for implanted in-phase coherently coupled VCSEL arrays is that this approach employs a simple and reliable fabrication process where the absence of loss between elements leads to in-phase coupling. We present data for 2, 3, and 4 element in-phase implant-defined coherently coupled VCSEL arrays.
  • Keywords
    III-V semiconductors; gallium arsenide; ion implantation; semiconductor laser arrays; semiconductor quantum wells; surface emitting lasers; 1D coherently coupled laser arrays; 2D coherently coupled laser arrays; GaAs; implant-defined vertical-cavity laser arrays; in-phase evanescently coupled arrays; out-of-phase operation; proton implantation; vertical-cavity surface-emitting laser arrays; Apertures; Distributed Bragg reflectors; Implants; Optical arrays; Optical coupling; Optical device fabrication; Optical losses; Optical surface waves; Surface emitting lasers; Vertical cavity surface emitting lasers; Coherent arrays; vertical-cavity surface-emitting laser (VCSEL);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2007.903503
  • Filename
    4298939