• DocumentCode
    1113732
  • Title

    Solid-phase epitaxial Pd/Ge ohmic contacts to In1-xGaxAsyP1-y/InP

  • Author

    Chen, W.X. ; Hsueh, S.C. ; Yu, P.K.L. ; Lau, S.S.

  • Author_Institution
    University of California, San Diego, La Jolla, CA
  • Volume
    7
  • Issue
    8
  • fYear
    1986
  • fDate
    8/1/1986 12:00:00 AM
  • Firstpage
    471
  • Lastpage
    473
  • Abstract
    A Pd/Ge metallization to InGaAsP/InP semiconductors, formed with solid-phase epitaxy (SPE) technique, has been investigated in this study. With this method, ohmic contacts with low specific contact resistance ( \\rho_{c} \\approx 2.3 \\times 10^{-6} Ω.cm2) have been achieved on p-type In0.53Ga0.47As( p \\approx 1.8 \\times 10^{19} /cm3). The same contact scheme also gives low specific contact resistance ( \\rho_{c} \\approx 6 \\times 10^{-7} Ω.cm2) on n-type In0.53Ga0.47As ( n \\approx 1.0 \\times 10^{19} /cm3). Excellent surface morphology is observed in all the samples, and the contacts do not deteriorate for at least 4 h at temperatures between 300 and 500°C.
  • Keywords
    Contact resistance; Epitaxial growth; Gold; Indium phosphide; Metallization; Ohmic contacts; Semiconductor materials; Surface morphology; Surface resistance; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26443
  • Filename
    1486266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113732