Monolithic integration of a DFB laser and an MQW optical modulator in the 1.5 µm wavelength range

Author

Kawamura, Yuichi ; Wakita, Koichi ; Yoshikuni, Yuzo ; Itaya, Yoshio ; Asahi, Hajime

Author_Institution

NTT Atsugi Electrical Communications Laboratories, Atsugi-shi, Kanagawa, Japan

Volume

23

Issue

6

fYear

1987

fDate

6/1/1987 12:00:00 AM

Firstpage

915

Lastpage

918

Abstract

A monolithically integrated device with an improved structure consisting of an InGaAsP/InP DFB laser and an In-GaAs/InAlAs MQW optical modulator was fabricated by the LPE (liquid phase epitaxy)/MBE (molecular beam epitaxy) hybrid growth technique. The DFB laser in this device was operated at 1.556 μm under CW condition at room temperature. A narrow coupling region between laser and modulator results in a depth of modulation as high as 55 percent at a modulator reverse bias voltage of -5 V. High-speed modulation with a response time of 300 ps was also achieved in this monolithic device.

Keywords

Distributed feedback (DFB) lasers; Epitaxial growth; Gallium materials/devices; Gallium materials/lasers; Integrated optoelectronics; Optical modulation/demodulation; Quantum effect semiconductor devices; High speed optical techniques; Indium compounds; Indium phosphide; Integrated optics; Molecular beam epitaxial growth; Monolithic integrated circuits; Optical devices; Optical modulation; Phase modulation; Quantum well devices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1987.1073439

Filename

1073439