Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy

We reported the successful preparation by chemical beam epitaxy (CBE) and performance characteristics of Ga0.47In0.53As/InP DH and MQW lasers emitting at m. The very low threshold current densities of 1.3 and 1.5 kA/cm²obtained for DH and MQW laser wafers, respectively, suggest that the present materials and heterointerfaces are of high quality. In fact, these \´s are the lowest obtained thus far for such lasers. Such results are consistent with the extremely high-quality Ga0.47In0.53As epilayers and Ga0.47In0.53As/InP quantum well structures also obtained grown by this technique. Differential quantum efficiency of ∼ 18 percent per facet was obtained for both DH and MQW lasers. Further, we were also able to show that there was a definite improvement in T0from K for DH laser wafers to K for MQW laser wafers in contrast to previous experimental results. This, we believe, is due to the improvement in both material and heterointerface qualities of the present layer structures as a result of the different growth chemistries occurring on the substrate surface when compared to molecular beam epitaxy and better control of composition transition and cleaner growth environment in CBE than in metalorganic chemical vapor deposition.