Title :
Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories
Author :
Gerardin, Simone ; Bagatin, Marta ; Paccagnella, Alessandro ; Ferlet-Cavrois, Veronique ; Visconti, Angelo ; Frost, C.D.
Author_Institution :
Dipt. di Ing. dell´Inf., Univ. di Padova, Padua, Italy
Abstract :
We study the response of NAND Flash memories to neutron and alpha particle exposure, on both Single- and Multi-Level Cell architectures manufactured in sub 30-nm technologies. We analyze the error rates and identify the relative importance of neutrons and alphas in the terrestrial environment and at aircraft altitudes, with both low-alpha and ultra-low-alpha materials. The efficacy of error correction codes is illustrated. Scaling trends are then discussed and modeled in single-level and multi-level cell devices.
Keywords :
NAND circuits; error correction codes; flash memories; nanotechnology; neutrons; radiation hardening (electronics); NAND flash memories; aircraft altitudes; alpha particle exposure; error correction codes; low-alpha alpha materials; multi-level cell architectures; multi-level cell devices; neutron particle exposure; single event upsets; single-level cell architectures; single-level cell devices; size 30 nm; terrestrial environment; ultra-low-alpha materials; Alpha particles; Error analysis; Error correction codes; Flash memories; Materials; Neutrons; Radiation effects; Alpha particles; flash memories; neutrons; radiation effects; single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2328097
