Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories

Author

Gerardin, Simone ; Bagatin, Marta ; Paccagnella, Alessandro ; Ferlet-Cavrois, Veronique ; Visconti, Angelo ; Frost, C.D.

Author_Institution

Dipt. di Ing. dell´Inf., Univ. di Padova, Padua, Italy

Volume

61

Issue

4

fYear

2014

fDate

Aug. 2014

Firstpage

1799

Lastpage

1805

Abstract

We study the response of NAND Flash memories to neutron and alpha particle exposure, on both Single- and Multi-Level Cell architectures manufactured in sub 30-nm technologies. We analyze the error rates and identify the relative importance of neutrons and alphas in the terrestrial environment and at aircraft altitudes, with both low-alpha and ultra-low-alpha materials. The efficacy of error correction codes is illustrated. Scaling trends are then discussed and modeled in single-level and multi-level cell devices.

Keywords

NAND circuits; error correction codes; flash memories; nanotechnology; neutrons; radiation hardening (electronics); NAND flash memories; aircraft altitudes; alpha particle exposure; error correction codes; low-alpha alpha materials; multi-level cell architectures; multi-level cell devices; neutron particle exposure; single event upsets; single-level cell architectures; single-level cell devices; size 30 nm; terrestrial environment; ultra-low-alpha materials; Alpha particles; Error analysis; Error correction codes; Flash memories; Materials; Neutrons; Radiation effects; Alpha particles; flash memories; neutrons; radiation effects; single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2328097

Filename

6866248