DocumentCode
1113941
Title
Device-grade ultra-shallow junctions fabricated with antimony
Author
Sai-Halasz, George A. ; Harrison, H.B.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume
7
Issue
9
fYear
1986
fDate
9/1/1986 12:00:00 AM
Firstpage
534
Lastpage
536
Abstract
Extremely shallow, below ∼80 nm, n+ junctions fabricated with antimony have been analytically and electrically investigated. It is shown that by the use of antimony one can reach sheet resistivity/ shallowness combinations that are superior to those achievable with arsenic. The leakage of these junctions was found to be sufficiently low to allow VLSI applications. These investigations indicate that below a certain junction depth antimony should be the dopant of preference.
Keywords
Boron; Conductivity measurement; Diodes; Electric variables measurement; Implants; Performance analysis; Performance evaluation; Testing; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26463
Filename
1486286
Link To Document