• DocumentCode
    1113969
  • Title

    Excimer laser lithography: Intensity-dependent resist damage

  • Author

    Davis, G.M. ; Gower, M.C.

  • Author_Institution
    Rutherford Appleton Laboratory, Didcot, England
  • Volume
    7
  • Issue
    9
  • fYear
    1986
  • fDate
    9/1/1986 12:00:00 AM
  • Firstpage
    543
  • Lastpage
    545
  • Abstract
    The absorption depths of Shipley AZ2400 and two Isofine e-beam resists P10 and PM20 have been measured with KrF (248 nm), KrCl (222 nm), and ArF (193 nm) excimer lasers. For all peak laser intensities at which the absorption depths were measured there was no evidence of reciprocity failure in the sensitivity response of the resists. At higher peak intensities the resists were damaged. The results show that the damage thresholds of these resists are sufficiently low that single-laser pulse exposures of thin films are not possible without damage occurring.
  • Keywords
    Absorption; Lamps; Laser beams; Laser modes; Light sources; Lithography; Optical pulses; Power lasers; Pulsed laser deposition; Resists;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26466
  • Filename
    1486289