DocumentCode
1113969
Title
Excimer laser lithography: Intensity-dependent resist damage
Author
Davis, G.M. ; Gower, M.C.
Author_Institution
Rutherford Appleton Laboratory, Didcot, England
Volume
7
Issue
9
fYear
1986
fDate
9/1/1986 12:00:00 AM
Firstpage
543
Lastpage
545
Abstract
The absorption depths of Shipley AZ2400 and two Isofine e-beam resists P10 and PM20 have been measured with KrF (248 nm), KrCl (222 nm), and ArF (193 nm) excimer lasers. For all peak laser intensities at which the absorption depths were measured there was no evidence of reciprocity failure in the sensitivity response of the resists. At higher peak intensities the resists were damaged. The results show that the damage thresholds of these resists are sufficiently low that single-laser pulse exposures of thin films are not possible without damage occurring.
Keywords
Absorption; Lamps; Laser beams; Laser modes; Light sources; Lithography; Optical pulses; Power lasers; Pulsed laser deposition; Resists;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26466
Filename
1486289
Link To Document