DocumentCode
1113977
Title
Narrow stripe graded barrier single quantum well lasers-threshold current considerations
Author
Patel, Navin B. ; Mattos, T.J.S. ; Prince, Francisco C. ; Nunes, A.S., Jr.
Author_Institution
Instituto de Física, Sao Paulo, Brazil
Volume
23
Issue
6
fYear
1987
fDate
6/1/1987 12:00:00 AM
Firstpage
988
Lastpage
992
Abstract
It is observed that narrow stripe graded barrier single quantum well lasers are relatively high threshold current devices ( > 50 mA), even though made from wafers with extremely low broad area threshold current density (<300 A/cm2). Besides, they show a complex time-dependent lasing behavior with sequential lasing from the 
and 
quantum levels. It is shown here that these properties are inherent to narrow stripe gain-guided SQW lasers and are dictated by the nature of the optical gain curve of the quantum well.
and quantum levels. It is shown here that these properties are inherent to narrow stripe gain-guided SQW lasers and are dictated by the nature of the optical gain curve of the quantum well.Keywords
Quantum-well laser; Current density; DH-HEMTs; Gallium arsenide; Laser applications; Laser theory; Optical arrays; Optical modulation; Quantum well lasers; Temperature; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073457
Filename
1073457
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