DocumentCode :
1113977
Title :
Narrow stripe graded barrier single quantum well lasers-threshold current considerations
Author :
Patel, Navin B. ; Mattos, T.J.S. ; Prince, Francisco C. ; Nunes, A.S., Jr.
Author_Institution :
Instituto de Física, Sao Paulo, Brazil
Volume :
23
Issue :
6
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
988
Lastpage :
992
Abstract :
It is observed that narrow stripe graded barrier single quantum well lasers are relatively high threshold current devices ( > 50 mA), even though made from wafers with extremely low broad area threshold current density (<300 A/cm2). Besides, they show a complex time-dependent lasing behavior with sequential lasing from the 
and 
quantum levels. It is shown here that these properties are inherent to narrow stripe gain-guided SQW lasers and are dictated by the nature of the optical gain curve of the quantum well.
and quantum levels. It is shown here that these properties are inherent to narrow stripe gain-guided SQW lasers and are dictated by the nature of the optical gain curve of the quantum well.Keywords :
Quantum-well laser; Current density; DH-HEMTs; Gallium arsenide; Laser applications; Laser theory; Optical arrays; Optical modulation; Quantum well lasers; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073457
Filename :
1073457
Link To Document :
