The inhibition mechanism in polarization bistable semiconductor lasers

Author

Ropars, Guy ; Le Floch, Albert ; Jézéquel, Guy ; Le Naour, Roger ; Chen, Ying C. ; Liu, Jia-Ming

Author_Institution

University of Rennes I, Rennes-Cédex, France

Volume

23

Issue

6

fYear

1987

fDate

6/1/1987 12:00:00 AM

Firstpage

1027

Lastpage

1032

Abstract

The polarization bistability between TE00and TM00eigenstates in InGaAsP/InP lasers is shown to be due to the mode inhibition mechanism. A theoretical analysis shows that the switching is governed by two current-dependent competing terms. One term represents the self-stabilization for the existing lasing mode to resist the onset of a new mode. The other term is the gain recovering term of the nonlasing mode. The major contribution to the latter is the relative current dependence of the TE and TM gains. By making proper assumptions for the device parameters based on experimental data, the observed hysteresis loops have been successfully modeled. The conditions for the existence of polarization bistability are discussed.

Keywords

Bistability, optical; Gallium materials/lasers; Laser modes; Optical bistability; Optical polarization; Gas lasers; Indium phosphide; Internal stresses; Laser modes; Laser theory; Polarization; Semiconductor lasers; Switches; Tellurium; Thermal stresses;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1987.1073458

Filename

1073458