• DocumentCode
    1114041
  • Title

    Enhanced optical nonlinearities in quantum well structures due to exciton localization

  • Author

    Takagahara, Toshihide ; Kumagai, Masami ; Hanamura, Eiichi

  • Author_Institution
    NTT Electrical Communications Laboratories, Tokyo, Japan
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    983
  • Lastpage
    987
  • Abstract
    The third-order optical nonlinearity \\chi ^{(3)} of bound excitons can have a large value as a consequence of double multiplication of the giant oscillator strength because the \\chi ^{(3)} process involves double repetition of the excitonic transition. A proposal to use the bound exciton level in the sheet-doped quantum well structure is made to obtain a large \\chi ^{(3)} value.
  • Keywords
    Quantum effect semiconductor devices; Quantum-well laser; Absorption; Bleaching; Excitons; Helium; Local oscillators; Nonlinear optics; Optical bistability; Plasma displays; Plasma temperature; Proposals;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1987.1073462
  • Filename
    1073462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114041