DocumentCode :
1114041
Title :
Enhanced optical nonlinearities in quantum well structures due to exciton localization
Author :
Takagahara, Toshihide ; Kumagai, Masami ; Hanamura, Eiichi
Author_Institution :
NTT Electrical Communications Laboratories, Tokyo, Japan
Volume :
23
Issue :
6
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
983
Lastpage :
987
Abstract :
The third-order optical nonlinearity 
of bound excitons can have a large value as a consequence of double multiplication of the giant oscillator strength because the process involves double repetition of the excitonic transition. A proposal to use the bound exciton level in the sheet-doped quantum well structure is made to obtain a large value.
of bound excitons can have a large value as a consequence of double multiplication of the giant oscillator strength because the process involves double repetition of the excitonic transition. A proposal to use the bound exciton level in the sheet-doped quantum well structure is made to obtain a large value.Keywords :
Quantum effect semiconductor devices; Quantum-well laser; Absorption; Bleaching; Excitons; Helium; Local oscillators; Nonlinear optics; Optical bistability; Plasma displays; Plasma temperature; Proposals;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073462
Filename :
1073462
Link To Document :
