Title :
Memory at VLSI Circuits Symposium
Author :
Itoh, Kiyoo ; Kurata, Hideaki ; Osada, Kenichi ; Sekiguchi, Tomonori
Author_Institution :
Hitachi Ltd., Tokyo
fDate :
4/1/2008 12:00:00 AM
Abstract :
Over the last decades, the Symposium has been the premier forum for memory, putting more emphasis on seminal memory circuits rather than on record-setting performances with actually fabricated full chips, which has been the emphasis at the ISSCC. Indeed, it has been the breeding ground for DRAMs, SRAMs, flash memories, and other memories.
Keywords :
DRAM chips; SRAM chips; VLSI; flash memories; DRAM; SRAM; VLSI circuits symposium; flash memories; seminal memory circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.917527
