Title :
Silicon Odometer: An On-Chip Reliability Monitor for Measuring Frequency Degradation of Digital Circuits
Author :
Kim, Tae-Hyoung ; Persaud, Randy ; Kim, Chris H.
Author_Institution :
Univ. of Minnesota, Minneapolis
fDate :
4/1/2008 12:00:00 AM
Abstract :
Precise measurement of digital circuit degradation is a key aspect of aging tolerant digital circuit design. In this study, we present a fully digital on-chip reliability monitor for high-resolution frequency degradation measurements of digital circuits. The proposed technique measures the beat frequency of two ring oscillators, one stressed and the other unstressed, to achieve 50 X higher delay sensing resolution than that of prior techniques. The differential frequency measurement technique also eliminates the effect of common-mode environmental variation such as temperature drifts between each sampling points. A 265 X 132 mum2test chip implementing this design has been fabricated in a 1.2 V, 130 nm CMOS technology. The measured resolution of the proposed monitoring circuit was 0.02%, as the ring oscillator in this design has a period of 4 ns; this translates to a temporal resolution of 0.8 ps. The 2 mus measurement time was sufficiently short to suppress the unwanted recovery effect from concealing the actual circuit degradation.
Keywords :
CMOS integrated circuits; circuit testing; digital circuits; distance measurement; monolithic integrated circuits; CMOS technology; aging tolerant digital circuit design; common-mode environmental variation; differential frequency measurement; digital circuit degradation; digital on-chip reliability monitor; high-resolution frequency degradation measurements; monitoring circuit; ring oscillators; slicon odometer; temperature drifts; temporal resolution; test chip; Aging; CMOS technology; Degradation; Digital circuits; Frequency measurement; Monitoring; Ring oscillators; Semiconductor device measurement; Silicon; Stress measurement; Aging; NBTI; degradation; monitoring circuit; reliability;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.917502