• DocumentCode
    1114071
  • Title

    AlGaAs/GaAs transverse junction stripe lasers fabricated on Si substrates using superlattice intermediate layers by MOCVD

  • Author

    Sakai, Shiro ; Hu, Xiong Wei ; Umeno, Masayoshi

  • Author_Institution
    University of Florida, Gainesville, FL
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    1085
  • Lastpage
    1088
  • Abstract
    TJS lasers are fabricated on Si substrates by diffusing Zn using sputtered SiO2as a mask, and the lasing properties are measured. The minimum threshold current of 379 mA and a differential efficiency of 2.2 percent have been obtained. The detailed fabrication procedure and laser characteristics are described in this paper.
  • Keywords
    Gallium materials/lasers; Semiconductor growth; Superlattices; DH-HEMTs; Diode lasers; Gallium arsenide; MOCVD; Optical device fabrication; Substrates; Superlattices; Temperature; Threshold current; Zinc;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1987.1073465
  • Filename
    1073465
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114071