DocumentCode
1114076
Title
Improved subthreshold characteristics of n-channel SOI transistors
Author
Davis, J.R. ; Glaccum, Anthony E. ; Reeson, K ; Hemment, Peter L.F.
Author_Institution
British Telecom Research Laboratories, Ipswick, Suffolk, U.K
Volume
7
Issue
10
fYear
1986
fDate
10/1/1986 12:00:00 AM
Firstpage
570
Lastpage
572
Abstract
It has been found that certain n-channel MOSFET\´s fabricated on silicon-on-insulator (SOI) substrates formed by oxygen implantation can have 
, characteristics with very steep slopes in the subthreshold region. In contradiction to normal models for short-channel transistors on bulk silicon, the slope becomes steeper for shorter gate lengths or higher drain voltages. This effect is shown to be related to the kink in the output characteristics of transistors with floating islands.
, characteristics with very steep slopes in the subthreshold region. In contradiction to normal models for short-channel transistors on bulk silicon, the slope becomes steeper for shorter gate lengths or higher drain voltages. This effect is shown to be related to the kink in the output characteristics of transistors with floating islands.Keywords
Annealing; Circuits; Doping; MOSFETs; Parasitic capacitance; Semiconductor device modeling; Silicon on insulator technology; Substrates; Temperature; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26477
Filename
1486300
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