• DocumentCode
    1114095
  • Title

    InGaSbAs injection lasers

  • Author

    Drakin, A.E. ; Eliseev, Peter G. ; Sverdlov, B.N. ; Bochkarev, A. ; Dolginov, L. ; Druzhinina, L.V. ; Bochkarev, A. ; Dolginov, L. ; Druzhinina, L.

  • Author_Institution
    Academy of Sciences of the U.S.S.R., Moscow, U.S.S.R
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    1089
  • Lastpage
    1094
  • Abstract
    Double heterojunction structures of InGaSbAs/GaAl-SbAs emitting at 300 K in the wide wavelength range of 1.8-2.4 \\mu m have been prepared by the LPE technique on gallium antimonide
  • Keywords
    Carrier confinement; Fiber lasers; Gallium compounds; Gas lasers; III-V semiconductor materials; Infrared detectors; Semiconductor lasers; Substrates; Surface emitting lasers; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1987.1073467
  • Filename
    1073467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114095