DocumentCode :
1114108
Title :
Density matrix model for highly nondegenerate four-wave mixing in semiconductor laser devices
Author :
Bava, G.P. ; Debernardi, P. ; Osella, G.
Author_Institution :
Cespa-CNR, Politecnico di Torino, Italy
Volume :
141
Issue :
2
fYear :
1994
fDate :
4/1/1994 12:00:00 AM
Firstpage :
119
Lastpage :
125
Abstract :
A model for highly nondegenerate fourwave mixing in semiconductor lasers has been implemented, with possible application to amplifiers operating under multifrequency optical fields and to oscillators used for frequency conversion. Fast phenomena, such as spectral hole burning and hot carrier effects, are accounted for in a unified approach through the density matrix formalism. Hence, the model is suitable for evaluating frequency mixing effects over a very wide range of beat frequency, starting from zero up to thousands of gigahertz. Interest in these phenomena has increased in recent years, both for the analysis of basic material characteristics and for application to devices for multichannel coherent optical communication systems. As an example, the model has been used to compute intermodulation effects in a travelling-wave amplifier, under multicarrier operation. The numerical simulation results are in satisfactory agreement with experimental measurements recently reported in the literature
Keywords :
multiwave mixing; optical frequency conversion; optical hole burning; semiconductor device models; semiconductor lasers; basic material characteristics; beat frequency; density matrix formalism; density matrix model; experimental measurements; frequency conversion; frequency mixing effects; highly nondegenerate four-wave mixing; hot carrier effects; intermodulation effects; multicarrier operation; multichannel coherent optical communication systems; multifrequency optical fields; numerical simulation results; oscillators; semiconductor laser devices; spectral hole burning; travelling-wave amplifier;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:19949991
Filename :
295501
Link To Document :
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