DocumentCode
1114175
Title
Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET process
Author
Rogers, Dennis L.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume
7
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
600
Lastpage
602
Abstract
High-performance interdigitated metal-semiconductor-metal (IMSM) detectors and photoreceivers have been fabricated using a standard refractory-gate, ion-implanted MESFET process which was also used to fabricate complex digital circuits. A rise time of 110 ps has been observed for a detector-preamplifier combination implying a small-signal bandwidth of about 3 GHz. Detector responsivities as high as 0.45 A/W, and dark currents as low as 5 nA have been observed.
Keywords
Circuit noise; Coupling circuits; Detectors; Implants; MESFET circuits; Monolithic integrated circuits; Noise reduction; Optical noise; Photodiodes; Preamplifiers;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26487
Filename
1486310
Link To Document