Title :
Bipolar transistor carrier-injected optical modulator/switch: Proposal and analysis
Author :
Tada, Kunio ; Okada, Yoshitaka
Author_Institution :
University of Tokyo, Tokyo, Japan
fDate :
11/1/1986 12:00:00 AM
Abstract :
Bipolar transistor structures can be used, instead of conventional p-n (p-i-n) junctions, to realize high-speed optical modulators and switches, which are operated by free-carrier injection. Some basic results obtained by the theoretical analysis of the structure applied to a DH X crossing are presented, with emphasis on the switching speed. It is shown that switching times can be as fast as 60 ps for the required ON-OFF optical switching, which is considerably faster than those expected for a diode structure.
Keywords :
Absorption; Bipolar transistors; High speed optical techniques; Optical buffering; Optical modulation; Optical refraction; Optical switches; Optical variables control; Optical waveguides; Proposals;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26489
