Title :
A fully planar heterojunction bipolar transistor
Author :
Tully, John W. ; Hant, W. ; O´Brien, B.B.
Author_Institution :
Northrop Research and Technology Center, Palos Verdes Peninsula, CA
fDate :
11/1/1986 12:00:00 AM
Abstract :
A fully planar heterojunction bipolar transistor (HBT) in the normal emitter-up configuration is reported. The process utilizes a two-step epitaxial deposition with an intervening selective ion implant of bases. A process is described, the aluminum lift-off (ALL) process, with which refractory metal contacts have been used. Large test devices fabricated have dc gains of β = 600.
Keywords :
Aluminum; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Implants; Inverters; Ion implantation; MOCVD; Resists; Sputter etching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26493
