A 70 nm 16 Gb 16-Level-Cell NAND flash Memory

Author

Shibata, N. ; Maejima, H. ; Isobe, K. ; Iwasa, K. ; Nakagawa, M. ; Fujiu, M. ; Shimizu, T. ; Honma, M. ; Hoshi, S. ; Kawaai, T. ; Kanebako, K. ; Yoshikawa, S. ; Tabata, H. ; Inoue, A. ; Takahashi, T. ; Shano, T. ; Komatsu, Y. ; Nagaba, K. ; Kosakai, M. ;

Author_Institution

Toshiba Corp. Semicond. Co., Yokohama

Volume

43

Issue

4

fYear

2008

fDate

4/1/2008 12:00:00 AM

Firstpage

929

Lastpage

937

Abstract

A 16 Gb 16-level-cell (16LC) NAND flash memory using 70 nm design rule has been developed . This 16LC NAND flash memory can store 4 bits in a cell which enabled double bit density comparing to 4-level-cell (4LC) NAND flash, and quadruple bit density comparing to single-bit (SLC) NAND flash memory with the same design rule. New programming method suppresses the floating gate coupling effect and enabled the narrow distribution for 16LC. The cache-program function can be achievable without any additional latches. Optimization of programming sequence achieves 0.62 MB/s programming throughput. This 16-level NAND flash memory technology reduces the cost per bit and improves the memory density even more.

Keywords

NAND circuits; cache storage; flash memories; optimisation; NAND flash Memory; bit rate 0.62 Mbit/s; cache-program function; floating gate coupling effect; memory size 16 GByte; programming sequence optimization; quadruple bit density; size 70 nm; Cellular phones; Costs; Demand forecasting; Digital cameras; Economic forecasting; History; Nonvolatile memory; Throughput; Universal Serial Bus; NAND flash memory; flash memory; floating gate coupling effect; multi-level cell;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2008.917559

Filename

4476510