Title :
DC and RF characterization of short-gate-length InGaAs/InAlAs MODFETs
Author :
Ketterson, A.A. ; Laskar, J. ; Brock, T.L. ; Adesida, I. ; Kolodzey, J. ; Aina, O.A. ; Hier, H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
10/1/1989 12:00:00 AM
Abstract :
Lattice-matched InGaAs/InAlAs MODFETs with gate lengths down to 0.15 μm have been fabricated and characterized. A large discrepancy is found between the gm measured at DC and microwave frequencies and is attributed to the finite time constant of electron emission from deep traps in the InAlAs. A maximum fT of 112 GHz is measured on a 0.15-μm gate-length device. Devices with more shallow recessed gates are found to have a 50% larger output conductance, which causes the devices to exhibit an fT that is greater than fmax
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.15 micron; 112 GHz; DC characteristics; InGaAs-InAlAs; MODFETs; RF characterization; cutoff frequency; deep traps; electron emission; gate lengths; lattice matched transistors; microwave frequencies; output conductance; recessed gates; time constant; transconductance; Electron emission; Frequency measurement; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Microwave frequencies; Microwave measurements; Radio frequency; Time measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
