• DocumentCode
    1114264
  • Title

    Improved cutoff frequency in vertical bipolar transistors fabricated with focused ion beam lateral base profiles

  • Author

    Yim, Hyung J. ; Greeneich, Edwin W.

  • Author_Institution
    Motorola, Inc., Mesa, AZ
  • Volume
    7
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    621
  • Lastpage
    622
  • Abstract
    Improved high-frequency performance in vertical bipolar transistors in which the active base region is fabricated with focused ion beam (FIB) lateral doping profiles is demonstrated. Profiles which reduce base resistance, current crowding, and high-level injection effects have the most significant effect on high-frequency characteristics.
  • Keywords
    Bipolar transistors; Boron; Current measurement; Cutoff frequency; Doping profiles; FETs; Implants; Ion beams; Proximity effect; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26495
  • Filename
    1486318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114264