• DocumentCode
    1114273
  • Title

    A new oxidation-resistant self-aligned TiSi2process

  • Author

    Tseng, Hsun-Hua ; Wu, Ching-Yuan

  • Author_Institution
    National Chiao-Tung University, Taiwan, Republic of China
  • Volume
    7
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    623
  • Lastpage
    624
  • Abstract
    This paper presents a thin amorphous Si (a-Si) on Ti as an oxidation-resistant material for a self-aligned TiSi2process. It is shown that a thin a-Si over Ti film will greatly suppress the interaction between Ti and ambient gases (N2and O2) during the thermal TiSi2formation cycle in conventional N2furnance while maintaining satisfactory self-aligned property after silicidation at a temperature below 630°C.
  • Keywords
    Amorphous materials; Annealing; Conductivity; Electrical resistance measurement; Etching; Oxidation; Silicidation; Silicides; Temperature; Thickness measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26496
  • Filename
    1486319
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114273