Title :
GaAs inversion-base bipolar transistor (GaAs IBT)
Author :
Matsumoto, Kazuhiko ; Hayashi, Yasuhiro ; Hashizume, Nobuo ; Yao, Takafumi ; Kato, Mansanori ; Miyashita, Toshiyuki ; Fukuhara, Noboru ; Hirashima, Hirofumi ; Kinosada, Toshiaki
Author_Institution :
MITI Japan, Ibaraki, Japan
fDate :
11/1/1986 12:00:00 AM
Abstract :
A completely new type of GaAs bipolar transistor with a base formed by a two-dimensional hole gas has been fabricated. The transistor has no metallurgical base layer but has an extremely thin inversion hole layer working as a base layer. The current gain β = 5.6 at 77 K and β = 17.1 at 300 K was obtained for the common emitter mode.
Keywords :
Annealing; Bipolar transistors; Electrodes; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; High speed integrated circuits; Two dimensional hole gas;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26498
