Title :
High-performance self-aligned gate (Al,Ga)As/GaAs MODFET´s on MBE Layers grown on
Author :
Arch, David K. ; Morkoç, Hadis ; Vold, P.J. ; Longerbone, M. ; Longerbone, M.
Author_Institution :
Honeywell Physical Sciences Center, Bloomington, MN
fDate :
11/1/1986 12:00:00 AM
Abstract :
Self-aligned gate (Al,Ga)As/GaAs modulation-doped FET´s (MODFET´s) have been demonstrated on MBE layers grown on
Keywords :
Degradation; Epitaxial layers; Fabrication; Gallium arsenide; HEMTs; MESFETs; MOCVD; MODFET circuits; Silicon; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26501
