• DocumentCode
    1114325
  • Title

    High-performance self-aligned gate (Al,Ga)As/GaAs MODFET´s on MBE Layers grown on

  • Author

    Arch, David K. ; Morkoç, Hadis ; Vold, P.J. ; Longerbone, M. ; Longerbone, M.

  • Author_Institution
    Honeywell Physical Sciences Center, Bloomington, MN
  • Volume
    7
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    635
  • Lastpage
    637
  • Abstract
    Self-aligned gate (Al,Ga)As/GaAs modulation-doped FET´s (MODFET´s) have been demonstrated on MBE layers grown on
  • Keywords
    Degradation; Epitaxial layers; Fabrication; Gallium arsenide; HEMTs; MESFETs; MOCVD; MODFET circuits; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26501
  • Filename
    1486324
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114325