GaAs/AlGaAs heterojunction MISFET´s having 1-W/mm power density at 18.5 GHz

The previously reported GaAs/AlGaAs heterojunction MISFET with an undoped AlGaAs layer as an insulator has been further optimized for power operation at upper Ku band. A 300-µm gate-width device generated 320 mW of output power with 33-percent efficiency at 18.5 GHz. The corresponding power density exceeds 1 W/mm. When optimized for efficiency, the device has achieved a power added efficiency of 43 percent at 19 GHz.