• DocumentCode
    1114345
  • Title

    High-frequency limits of millimeter-wave transistors

  • Author

    Steer, Michael B. ; Trew, Robert J.

  • Author_Institution
    North Carolina State University, Raleigh, NC
  • Volume
    7
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    640
  • Lastpage
    642
  • Abstract
    Estimates of transistor performance at millimeter-wave frequencies are generally based on extrapolation of microwave gain measurements at a gain roll-off of 6 dB per frequency octave. In this paper we show that a complex-conjugate pole pair leads to a 12-dB/octave gain roll-off in the millimeter-wave region. As a result the actual f_{\\max } of millimeter-wave transistors can be considerably less than that determined using extrapolation of gain measurements.
  • Keywords
    Capacitors; Circuit analysis; DH-HEMTs; Frequency; Gallium arsenide; MESFET circuits; Military computing; Millimeter wave transistors; Parasitic capacitance; Roentgenium;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26503
  • Filename
    1486326