DocumentCode
1114345
Title
High-frequency limits of millimeter-wave transistors
Author
Steer, Michael B. ; Trew, Robert J.
Author_Institution
North Carolina State University, Raleigh, NC
Volume
7
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
640
Lastpage
642
Abstract
Estimates of transistor performance at millimeter-wave frequencies are generally based on extrapolation of microwave gain measurements at a gain roll-off of 6 dB per frequency octave. In this paper we show that a complex-conjugate pole pair leads to a 12-dB/octave gain roll-off in the millimeter-wave region. As a result the actual
of millimeter-wave transistors can be considerably less than that determined using extrapolation of gain measurements.
of millimeter-wave transistors can be considerably less than that determined using extrapolation of gain measurements.Keywords
Capacitors; Circuit analysis; DH-HEMTs; Frequency; Gallium arsenide; MESFET circuits; Military computing; Millimeter wave transistors; Parasitic capacitance; Roentgenium;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26503
Filename
1486326
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