DocumentCode :
1114345
Title :
High-frequency limits of millimeter-wave transistors
Author :
Steer, Michael B. ; Trew, Robert J.
Author_Institution :
North Carolina State University, Raleigh, NC
Volume :
7
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
640
Lastpage :
642
Abstract :
Estimates of transistor performance at millimeter-wave frequencies are generally based on extrapolation of microwave gain measurements at a gain roll-off of 6 dB per frequency octave. In this paper we show that a complex-conjugate pole pair leads to a 12-dB/octave gain roll-off in the millimeter-wave region. As a result the actual 
of millimeter-wave transistors can be considerably less than that determined using extrapolation of gain measurements.
of millimeter-wave transistors can be considerably less than that determined using extrapolation of gain measurements.Keywords :
Capacitors; Circuit analysis; DH-HEMTs; Frequency; Gallium arsenide; MESFET circuits; Military computing; Millimeter wave transistors; Parasitic capacitance; Roentgenium;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26503
Filename :
1486326
Link To Document :
