Picosecond photocarrier transport in hydrogenated amorphous-silicon p-i-n diodes

Author

Schiff, E.A. ; Grahn, H.T. ; Devlen, R.I. ; Tauc, J. ; Guha, S.

Author_Institution

Dept. of Phys., Syracuse Univ., NY, USA

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2781

Lastpage

2784

Abstract

Optically detected, picosecond-domain photocarrier transport measurements for hydrogenated amorphous silicon (a-Si:H) p-i-n diodes with uniform and nonuniform electric fields are reported. The transient electroabsorption bleaching mechanism for optical detection is described, and the interpretation of these transients is extended to the case of nonuniform electric fields. A technique for using surface-absorbed light and optical detection for measurement of nonuniform electric fields is presented

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; optical saturable absorption; p-i-n diodes; photoconductivity; photodiodes; silicon; Si:H diode; amorphous semiconductors; nonuniform electric fields; optical detection; p-i-n diodes; picosecond-domain photocarrier transport; transient electroabsorption bleaching mechanism; uniform electric field; Electric variables measurement; Electron mobility; Monitoring; Nonuniform electric fields; Optical pulses; Optical pumping; Optical sensors; P-i-n diodes; Photoconductivity; Physics;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40937

Filename

40937