Photoemission spectroscopy of heterojunctions of amorphous hydrogenated silicon with silicon oxide and nitride

Author

Yang, Liyou ; Abeles, Benjamin ; Eberhardt, Wolfgang ; Sondericker, D.

Author_Institution

Solarex Thin Film Div., Newtown, PA, USA

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2798

Lastpage

2802

Abstract

A study of the growth and electronic structure of a-Si:H/a-SiN_x:H and a-Si:H/a-SiO_x:H heterojunctions by photoemission spectroscopy is discussed. The interfaces in a-Si:H/a-SiO_x are atomically abrupt, except for the SiO_x on the Si interface which is graded over ~3 Å due to plasma oxidation. The offset energies between the a-Si:H valence band and those of a-SiN_x:H and a-SiO_x:H are 1.2 and 4.0 eV, respectively. Extra H(~2×10¹⁵) is incorporated in the Si on the SiN_x interface region. The hole wave functions in a-Si:H are localized on a scale of 1-2 interatomic distances

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; interface electron states; semiconductor-insulator boundaries; silicon; silicon compounds; ultraviolet photoelectron spectra; Si:H-SiN_x:H heterojunction; Si:H-SiO_x:H heterojunction; electronic structure; hole wave functions; offset energies; photoemission spectroscopy; plasma oxidation; semiconductor growth; valence band; Amorphous materials; Bonding; Buffer layers; Heterojunctions; Insulation; Photoelectricity; Plasma waves; Pollution measurement; Silicon compounds; Spectroscopy;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40940

Filename

40940