Title :
Space-charge photomodulation in metal/insulator/amorphous semiconductor structures [TFTs]
Author :
Fortunato, Guglielmo ; Mariucci, Luigi ; Reita, Carlo ; Foglietti, P.
Author_Institution :
Istituto di Elettronica dello Stato Solido, CNR, Rome, Italy
fDate :
12/1/1989 12:00:00 AM
Abstract :
The space-charge density variation induced by illumination in metal-insulator-amorphous-semiconductor structures has been observed for the first time by monitoring the transient photocurrent. The dependence of the charge variation on the gate voltage provides a useful tool for the flatband voltage determination
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; insulated gate field effect transistors; metal-insulator-semiconductor structures; photoconductivity; silicon; space charge; thin film transistors; transients; Si:H; amorphous semiconductors; flatband voltage determination; gate voltage; illumination; inverted staggered TFT; metal-insulator-amorphous-semiconductor structures; space charge photomodulation; space-charge density; thin film transistor; transient photocurrent; Amorphous semiconductors; Channel bank filters; Conducting materials; Insulation; Metal-insulator structures; Photoconducting materials; Photoconductivity; Temperature measurement; Thin film transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
