Title :
Fabrication and characterization of the amorphous-silicon static induction transistor
Author :
Bisson, Michel ; Kemp, Mathieu ; Meunier, Michel
Author_Institution :
Dept. de Genie Phys., Ecole Polytech. de Montreal, Que., Canada
fDate :
12/1/1989 12:00:00 AM
Abstract :
Experimental results for the fabrication and electrical characterization of a hydrogenated amorphous silicon static induction transistor are reported. The I-V measurements demonstrate the triode-like enhancement mode operation of the device and show an on-off current ratio of 300 and a pinchoff voltage of -9.5 V for Vds=6 V. Numerical simulation suggests that the differences between experimental and theoretically predicted results are due to the presence of a high-density-of-states layer at the a-Si:H/a-Si:H interface
Keywords :
amorphous semiconductors; elemental semiconductors; field effect transistors; hydrogen; silicon; -9.5 V; I-V measurements; Si:H static induction transistor; amorphous semiconductor; electrical characterization; enhancement mode operation; numerical simulation; pinchoff voltage; Crystallization; Current measurement; Density measurement; Fabrication; Gold; Helium; Numerical simulation; Ohmic contacts; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
