• DocumentCode
    1114443
  • Title

    Fabrication and characterization of the amorphous-silicon static induction transistor

  • Author

    Bisson, Michel ; Kemp, Mathieu ; Meunier, Michel

  • Author_Institution
    Dept. de Genie Phys., Ecole Polytech. de Montreal, Que., Canada
  • Volume
    36
  • Issue
    12
  • fYear
    1989
  • fDate
    12/1/1989 12:00:00 AM
  • Firstpage
    2844
  • Lastpage
    2847
  • Abstract
    Experimental results for the fabrication and electrical characterization of a hydrogenated amorphous silicon static induction transistor are reported. The I-V measurements demonstrate the triode-like enhancement mode operation of the device and show an on-off current ratio of 300 and a pinchoff voltage of -9.5 V for Vds=6 V. Numerical simulation suggests that the differences between experimental and theoretically predicted results are due to the presence of a high-density-of-states layer at the a-Si:H/a-Si:H interface
  • Keywords
    amorphous semiconductors; elemental semiconductors; field effect transistors; hydrogen; silicon; -9.5 V; I-V measurements; Si:H static induction transistor; amorphous semiconductor; electrical characterization; enhancement mode operation; numerical simulation; pinchoff voltage; Crystallization; Current measurement; Density measurement; Fabrication; Gold; Helium; Numerical simulation; Ohmic contacts; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.40944
  • Filename
    40944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114443