Performance of a high-resolution contact-type linear image sensor with a-Si:H/a-SiC:H heterojunction photodiodes

Author

Kunii, Masafumi ; Hasegawa, Kazumasa ; Oka, Hideaki ; Nakazawa, Yoshio ; Takeshita, Tetsuy Oshi ; Kurihara, Hajime

Author_Institution

Seiko Epson Corp., Nagano, Japan

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2877

Lastpage

2882

Abstract

A 400 DPI (dots-per-inch) contact-type linear image sensor with a scanning speed of 2 ms/line using amorphous silicon photodiodes and poly-Si thin-film transistor drivers has been developed. The characteristics of the heterojunction photodiodes are discussed, and the results of sensor performance tests are examined in terms of output signal uniformity, photoresponse lag, spectral response, gray scale, and the reliability of the 400 DPI image sensor

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; image sensors; photodiodes; semiconductor device testing; silicon; silicon compounds; Si:H-SiC:H heterojunction photodiodes; amorphous semiconductor; gray scale; high-resolution contact-type linear image sensor; photoresponse lag; reliability; scanning speed; sensor performance tests; spectral response; thin-film transistor drivers; Bonding; Dark current; Driver circuits; Electrodes; Heterojunctions; Image sensors; Photodiodes; Substrates; Thin film transistors; Wire;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40949

Filename

40949