Title :
In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistors
Author :
Lee, Wai ; Fonstad, Clifton G.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, MA
fDate :
12/1/1986 12:00:00 AM
Abstract :
In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As n-p-n abrupt double-heterojunction bipolar transistors grown by molecular beam epitaxy (MBE) have been realized for the first time. DC current gains in excess of 300 have been measured on devices operated in the emitter-up configuration. DC current gains around 50 are obtained on device structures with Be+ implanted extrinsic base regions operated in the emitter-down configuration. The carrier injection and collection behavior of the abrupt InGaAs/InAlAs heterojunctions is discussed.
Keywords :
Bipolar transistors; Current measurement; Fabrication; Gain measurement; Helium; Heterojunction bipolar transistors; Implants; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26519
