• DocumentCode
    1114573
  • Title

    Hydrogenated amorphous-silicon/crystalline-silicon heterojunctions: properties and applications

  • Author

    Matsuura, Hideharu

  • Author_Institution
    Electrotech. Lab., Ibaraki, Japan
  • Volume
    36
  • Issue
    12
  • fYear
    1989
  • fDate
    12/1/1989 12:00:00 AM
  • Firstpage
    2908
  • Lastpage
    2914
  • Abstract
    Fundamental properties of amorphous-silicon/crystalline-silicon heterojunctions are studied through their capacitance-voltage and current-voltage characteristics. In light of the heterojunction properties, the applicability to devices such as vidicon targets, gamma-ray detectors, solar cells, and heterojunction bipolar transistors is discussed
  • Keywords
    amorphous semiconductors; elemental semiconductors; gamma-ray detection and measurement; heterojunction bipolar transistors; hydrogen; semiconductor counters; semiconductor junctions; silicon; solar cells; television equipment; Si:H-Si heterojunction; amorphous semiconductors; capacitance-voltage characteristics; current-voltage characteristics; gamma-ray detectors; heterojunction bipolar transistors; solar cells; vidicon targets; Amorphous materials; Capacitance-voltage characteristics; Charge carrier processes; Crystallization; Gold; Heterojunctions; Ohmic contacts; Silicon; Space charge; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.40954
  • Filename
    40954