Hydrogenated amorphous-silicon image sensors

Author

Rosan, Karlheinz

Author_Institution

Siemens Res. Lab., Munich, West Germany

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2923

Lastpage

2927

Abstract

Recent developments in hydrogenated amorphous-silicon image sensors are reviewed, and their specific problems discussed. One of the most exciting features of amorphous silicon is its large-area capability. Principal development efforts are therefore directed toward contact-type linear image sensors. Contact-type area sensors represent a new challenge and are already being developed. Amorphous silicon is also a good candidate for future high-definition video image sensors. Hybrid technology sensors (direct-readout and matrix-readout sensors), integrated sensors (photodiode and photoconductor types), optical scanning sensors, and other image sensors are reviewed

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; image sensors; photoconducting devices; photodiodes; reviews; silicon; Si:H image sensor; amorphous semiconductor; contact-type linear image sensors; direct readout sensor; high-definition video image sensors; hybrid technology sensor; integrated sensors; matrix-readout sensors; optical scanning sensors; photoconductor type sensor; photodiode sensor; Circuits; Diodes; Image sensors; Impedance; Phased arrays; Photoconductivity; Photodiodes; Sensor arrays; Silicon; Switches;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40956

Filename

40956