Title :
EXAD: A novel electron-beam X-ray absorption method of nondestructive depth measurement for silicon trenches
Author :
Kure, Tokuo ; Komoda, Tsutomu ; Sunami, Hideo ; Okazaki, Shinji ; Hayashida, Tetsuya
Author_Institution :
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan
fDate :
12/1/1986 12:00:00 AM
Abstract :
A novel X-ray absorption method, the Electron-beam generated X-ray Absorption for Depth measurement (EXAD), has been proposed for nondestructive depth measurement of individual submicrometer-wide trenches. This method is based on the phenomenon that X-rays generated at the bottom of a trench by electron-beam exposure decay in intensity while coming out through the inclined path of bulk silicon. An intensity ratio of an X-ray from the bulk surface to that from the bottom is directly proportional to the trench depth. This method has been successfully applied to 1-µm-wide and 5-µm-deep silicon trenches.
Keywords :
Capacitors; Corrugated surfaces; DRAM chips; Electromagnetic wave absorption; Electron beams; Pollution measurement; Random access memory; Reproducibility of results; Research and development; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26526