DocumentCode
1114600
Title
EXAD: A novel electron-beam X-ray absorption method of nondestructive depth measurement for silicon trenches
Author
Kure, Tokuo ; Komoda, Tsutomu ; Sunami, Hideo ; Okazaki, Shinji ; Hayashida, Tetsuya
Author_Institution
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan
Volume
7
Issue
12
fYear
1986
fDate
12/1/1986 12:00:00 AM
Firstpage
703
Lastpage
704
Abstract
A novel X-ray absorption method, the Electron-beam generated X-ray Absorption for Depth measurement (EXAD), has been proposed for nondestructive depth measurement of individual submicrometer-wide trenches. This method is based on the phenomenon that X-rays generated at the bottom of a trench by electron-beam exposure decay in intensity while coming out through the inclined path of bulk silicon. An intensity ratio of an X-ray from the bulk surface to that from the bottom is directly proportional to the trench depth. This method has been successfully applied to 1-µm-wide and 5-µm-deep silicon trenches.
Keywords
Capacitors; Corrugated surfaces; DRAM chips; Electromagnetic wave absorption; Electron beams; Pollution measurement; Random access memory; Reproducibility of results; Research and development; Silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26526
Filename
1486349
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