• DocumentCode
    1114600
  • Title

    EXAD: A novel electron-beam X-ray absorption method of nondestructive depth measurement for silicon trenches

  • Author

    Kure, Tokuo ; Komoda, Tsutomu ; Sunami, Hideo ; Okazaki, Shinji ; Hayashida, Tetsuya

  • Author_Institution
    Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan
  • Volume
    7
  • Issue
    12
  • fYear
    1986
  • fDate
    12/1/1986 12:00:00 AM
  • Firstpage
    703
  • Lastpage
    704
  • Abstract
    A novel X-ray absorption method, the Electron-beam generated X-ray Absorption for Depth measurement (EXAD), has been proposed for nondestructive depth measurement of individual submicrometer-wide trenches. This method is based on the phenomenon that X-rays generated at the bottom of a trench by electron-beam exposure decay in intensity while coming out through the inclined path of bulk silicon. An intensity ratio of an X-ray from the bulk surface to that from the bottom is directly proportional to the trench depth. This method has been successfully applied to 1-µm-wide and 5-µm-deep silicon trenches.
  • Keywords
    Capacitors; Corrugated surfaces; DRAM chips; Electromagnetic wave absorption; Electron beams; Pollution measurement; Random access memory; Reproducibility of results; Research and development; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26526
  • Filename
    1486349