Abstract :
The following error appeared in the article by X.N. Zhang et al., "Burst and low-frequency generation-recombination noise in double-heterojunction bipolar transistors," IEEE Electron Device Lett., vol. EDL-5, no. 7, pp. 277-279, July 1984. In Figs. 2, 3, and 4 SIB must be multiplied by a factor of 100. SIB is therefore much larger than the shot nolse of the base current. There is now indication of two generation-recombination noise bumps in Figs. 2 and 3. All other conclusions remain intact.
