Title :
Short-channel a-Si thin-film MOS transistors
Author :
Uchida, Yasutaka ; Matsumura, Masakiyo
Author_Institution :
Takushoku Univ., Tokyo, Japan
fDate :
12/1/1989 12:00:00 AM
Abstract :
Experimental results on planar-type amorphous-silicon MOS transistors with submicrometer-length channels are described. The minimum channel length fabricated by using exposure technology was about 0.4 μm. The 0.55-μm-long device had an on-off current ratio of more than 105 at VD=2 V
Keywords :
amorphous semiconductors; elemental semiconductors; insulated gate field effect transistors; silicon; silicon compounds; thin film transistors; 0.4 micron; 0.55 micron; 2 V; Si-SiO2 thin film transistor; amorphous semiconductors; exposure technology; on-off current ratio; short channel thin film MOS transistor; submicrometer-length channels; Displays; FETs; Helium; Hydrogen; Insulation; MOSFETs; Resists; Substrates; Thin film transistors; Wet etching;
Journal_Title :
Electron Devices, IEEE Transactions on
