• DocumentCode
    1114628
  • Title

    Short-channel a-Si thin-film MOS transistors

  • Author

    Uchida, Yasutaka ; Matsumura, Masakiyo

  • Author_Institution
    Takushoku Univ., Tokyo, Japan
  • Volume
    36
  • Issue
    12
  • fYear
    1989
  • fDate
    12/1/1989 12:00:00 AM
  • Firstpage
    2940
  • Lastpage
    2943
  • Abstract
    Experimental results on planar-type amorphous-silicon MOS transistors with submicrometer-length channels are described. The minimum channel length fabricated by using exposure technology was about 0.4 μm. The 0.55-μm-long device had an on-off current ratio of more than 105 at VD=2 V
  • Keywords
    amorphous semiconductors; elemental semiconductors; insulated gate field effect transistors; silicon; silicon compounds; thin film transistors; 0.4 micron; 0.55 micron; 2 V; Si-SiO2 thin film transistor; amorphous semiconductors; exposure technology; on-off current ratio; short channel thin film MOS transistor; submicrometer-length channels; Displays; FETs; Helium; Hydrogen; Insulation; MOSFETs; Resists; Substrates; Thin film transistors; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.40959
  • Filename
    40959
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114628